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This work addresses a 1T1R RRAM architecture, which allows for the precise and reliable control of the forming/set current by using an access transistor. The 1T1R devices were fabricated in a modified 0.25μm CMOS technology. The memory cells show stable resistive switching in dc as well as pulse-induced mode with an endurance of 10 3 and 10 2 cycles, respectively. The variation of...
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