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Supercritical carbon dioxide (SCCO2) fluid technology was applied to indium-tin-oxide (ITO) electrode to improve the resistive switching characteristic of silicon oxide RRAM through hydride oxidation for the first time. We found device power consumption can be effectively reduced so that side effects can be also restricted under device operation. By applying SCCO2 fluid, more oxygen ions will be introduced...
This paper investigates gate drive design for high voltage gallium nitride (GaN) high electron-mobility transistors (HEMT) in a cascade structure. High dv/dt and di/dt switching characteristics of GaN device and its influences on high-side gate drive are analyzed on an 8.4kW bidirectional multi-channel buck/boost battery charger operating in critical conduction mode (CRM). Driving candidates for high-side...
A new SOI high-voltage power device with a combination of Uniform and Variation in Lateral Doping profiles on Partial Membrane(UVLD PM SOI) is proposed. Its partial substrate under the drift region is etched to release the potential lines below the buried layer, combining uniform and variation in lateral doping profiles, resulting in an enhancement of breakdown voltage while achieving a low specific...
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