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Due to small bond size, short bonding time, especially slight interface reaction, bonding details cannot be recognized using scanning electron microscope and energy density X-ray spectrum. In order to understand the physical mechanism of ultrasonic wedge bonding, in this paper, bond interface of ultrasonic AlSi wire wedge bonding on Au/Ni/Cu pad was investigated under high resolution transmission...
The joining mechanism of ultrasonic wedge bonding was investigated by chemical etching method. Compared to peeling-off method, the advantage of chemical etching method not only reflected the characters of the bond interface, but also indicated the physical process and bonding mechanism of the interconnection between the metal wire and metallization. It was found that the evolution and characters of...
Al+1%Si wire with 25mum diameter and three kinds of pads (Au/Ni/Cu pad , Cu pad and Ni/Cu pad) are bonded by ultrasonic wedge bonding. The influence of the parameters (ultrasonic power, bonding time and bonding force) on the formation of joint are studied. Surface plot and contour plot are protracted with MINITAB, and the processing parameters are also optimized. A special circuit to test joint resistance...
Ultrasonic wedge bonding, which can be done at room temperature, is widely used in microelectronic package. It is primarily used to bond either Al wire or Au wire. After bonding and aging, the joint cross-section of 25mum Au wire bonded on Al metallization pad was analyzed by SEM with EDX. It is found that, there was evident diffusion of Au and Al, and Au5Al2 intermetallic compound (IMC) formed first...
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