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High microwave-noise performance is realized in AlGaN/GaN metal-insulator semiconductor high-electron mobility transistors (MISHEMTs) on high-resistivity silicon substrate using atomic-layer-deposited (ALD) Al2O3 as gate insulator. The ALD Al2O3/AlGaN/GaN MISHEMT with a 0.25- ??m gate length shows excellent microwave small signal and noise performance. A high current-gain cutoff frequency fT of 40...
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