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A recently developed simulation algorithm based on the Shockley-Read-Hall model was used to describe the characteristics of the output pulses from the newly developed high voltage nanosecond electrical pulse generator (HVNEPG). The new HVNEPG was based on a semi-insulating Gallium Arsenide (GaAs) photoconductive semiconductor switch (PCSS) which was biased at high external electric field (26.7 KV/cm)...
The formation of the ldquoS-shapedrdquo negative differential conductivity (NDC) of high gain GaAs photoconductive semiconductor switches (PCSS) is qualitatively analyzed. The development of NDC is characterized by localized direct transform from N-shaped to S-shaped NDC.
The streamer formation and propagation in high gain semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) is analyzed in detail. This streamer model on the basis of photo-ionization, growing domain, and the collective impact ionization (CII) mechanism can explain the propagation velocity and the branch and the bend of streamer. This model is characterized by introducing the growing...
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