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We present our observation of an anomalous temperature and optical excitation intensity dependence of the electron tunneling between a two-dimensional electron gas (2DEG) and Si dots in the direct tunneling mode. We find that the gate voltages required for the electron injection from the 2DEG to Si-dots become smaller with increase in the temperature or in the optical excitation intensity. The experimental...
We have found that, for Si dots individually charged with a few electrons or holes, characteristic potential profiles with a dimple around the center of the charged Si dot are observed and can be interpreted in terms of the Coulomb repulsion among the charges retained in the dot. By an introduction of Ge core in Si dots, holes can be well-confined in the Ge core while electrons are stored in the Si...
We have experimentally found two different mechanisms characterizing effective work function (Phim,eff) of a gate electrode on Hf-based high-k dielectrics. Interface dipoles induce both positive and negative Phim,eff shifts. The positive shift is almost independent of gate electrode materials, while the negative one is sensitive to Si composition of the gate electrode. Surface densities of the dipoles...
A binary image sensor with motion vector detection has been developed and successfully tested. The sensor acquires binary images and detects motion vectors using block matching method. The size of matching blocks and the search area of motion vectors are variable. The block matching is realized by a 2-D shift-register, XOR circuits and block current-sum circuits. The sensor integrates 32/spl times/32...
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