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We investigate step configurations during homoepitaxial growth on Si(111) near the ''1x1''-7x7 phase transition temperature. The surface mass diffusion constant is larger on ''1x1'' than on 7x7. This difference in the surface mass diffusion constant, coupled with the preferential nucleation of 7x7 at the upper side of the step, causes asymmetry in the surface mass diffusion during the ''1x1''-7x7...
Ge solid phase epitaxy on a Si(111) surface has been directly observed by secondary electron surface microscopy which is based on scanning electron microscopy. Ge island formation initially occurs at steps and out-of-phase boundaries of (7 7) domains. These results confirm the origin of previously reported mesh patterns of Ge islands grown on Si(111).
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