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Tb-doped AlN films are prepared by reactive radio frequency (RF) magnetron sputtering under different work conditions. As the RF power increases from 50 to 250W, the prepared film changes from amorphous to c-axis oriented crystalline. Lower work pressure and higher RF power enhance the deposition rate and crystallinity. The emission from 5 D 4 to 7 F J (J=6–0) of Tb...
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