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Two kinds of new silicon actuators, cantilever and twisted-beam, based on pn diode actuation principle are presented. The space gap that is absolutely needed in conventional electrostatic MEMS actuators is replaced by a depletion layer in reversely-biased pn diode. The strong electric field generated in the depletion layer forces a silicon microstructure to vibrate. The microstructure causes a large...
In order to clarify the source of resonant frequency drift in MEMS resonators, thermal expansion effect of packaging on MEMS devices was investigated. The strain in a silicon plate bonded on an aluminum plate with temperature was precisely measured. Increasing amount of strain in the aluminum plate was as large as 200 micro-strain with increase in only 20 degrees of temperature. The strain in the...
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