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Highly spin-polarized ferromagnetic materials have attracted much attention for high-performance spintronic devices. Recently, antiperovskite 3d ferromagnetic nitirides such as Fe4N and CoxFe4−xN are focused because they do not contain rare earth elements and harmful elements. Recent first-principle calculation suggests that Co3FeN has a high negative spin polarization (P = −1), hence Co3FeN is most...
Silicon multiplanar doping was employed to improve the disilane doping efficiency during the growth of GaAs by GSMBE using triethylgallium and arsine as matrix element sources. The doping efficiency was 100% for Si planar separations ( delta s) of 10 nm or greater. A maximum carrier concentration of 7.5*10/sup 18/ cm/sup -3/ was achieved at delta s=5 nm.<<ETX>>
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