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2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending the detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si photodetectors are used for short‐wavelength infrared or even long‐wavelength...
The cover shows the extrinsic photoconduction induced Ge‐based polarization‐sensitive photodetector. The structure of the Ge‐based photodetector is shown in the upper left corner. The amplified crystal structure of GeSe with several Ge vacancies is shown in the middle. Additionally, the image of excess carriers being excited by a polarized light is shown in the lower right corner. In article number...
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