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Using a low-k porous organosilisesqueoxane film, ALCAP/sup TM/-S with k=2.1, dual hard mask (DHM) process is proposed for Cu dual damascene interconnect (DDI) formation. The porous organosilica film has very high etching rate relative to those of the hard mask (HM) and/or etch-stop materials. SiO/sub 2//SiC is one of the best combinations for the DHM, in which the lower hard mask of SiC remained after...
The effect of underlayer texture on Cu film properties and electromigration performance in Cu damascene interconnects have been studied. The Cu film orientation depends strongly on the underlayer texture. The Cu<111> orientation can be controlled by changing the preferred orientation of the TiN underlayer, which has the same cubic structure as the Cu. The Cu film deposited on a highly <111>-oriented...
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