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A prototype Mössbauer Spectroscopic Microscope is applied for the feasibility study of 57Fe impurity diffusion in Si wafers. A 2nm- 57Fe deposited Si wafer is annealed at 430 °C for 1 hour, and subsequently the 1/3 area of the wafer is further grinded with an angle of 6 degrees to the original surface to get a higher depth resolution for the mapping. Subsequently, the mapping images for Fe ...
A 3D-Mössbauer Spectroscopic Microscope is developed to evaluate Fe impurities in multi-crystalline Si solar cells, which combines the Mössbauer spectroscopic microscope with a scanning electron microscope (SEM), an electron beam induced current (EBIC), an electron backscatter diffraction (EBSD), and an electron energy analyzer (HV-CSA). In addition, a new moving-coil-actuator with a liner encoder...
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