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Severe power consumption in the continuous scaling of Silicon‐based dynamic random access memory (DRAM) technology quests for a transistor technology with a much lower off‐state leakage current. Wide bandgap amorphous oxide semiconductors, especially indium‐gallium‐zinc‐oxide (IGZO) exhibit many orders of magnitude lower off‐state leakage. However, they are typically heavily n‐doped and require negative...
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