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Electrically active defects induced in oxygen-rich Ge:Sb crystals by irradiation with MeV electrons at 80 or 300K have been studied by means of capacitance transient techniques. Transformations of the defects upon post-irradiation isochronal anneals have also been investigated. It is argued that a radiation-induced electron trap with an energy level at about 110meV below the conduction band edge (E...
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