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We have investigated the effects on electrical properties of Al-doped ZnO (AZO) semiconductor films induced by 90MeV Ni, 100MeV Xe and 200MeV Xe ions. The AZO films with c-axis orientation on SiO 2 -glass substrate were prepared by using a RF-sputter-deposition method at 400°C. We find that the conductivity increases by two order of magnitude under high-energy-heavy ion irradiation, as has...
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