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The understanding of the growth kinetics of conductive filaments in soft polymers is crucial to achieve controllable and reliable resistive random access memory (RRAM). A simple solution‐processed and cone‐shaped contact method is developed by Mingdong Yi, Linghai Xie, Wei Huang, and co‐workers in article number 1701333. The nanoscale engineering of a resistance‐switching layer opens the possibility...
Conductive filaments (CFs)‐based resistive random access memory possesses the ability of scaling down to sub‐nanoscale with high‐density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic...
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