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Resistive Switching
In article number 2302979, Wen‐Wei Wu and co‐workers systematically investigate the resistive‐switching performance and mechanisms of high‐entropy oxide (HEO)‐based memristors. The SET/RESET behavior is induced by the migration of oxygen ions, leading to a structural transformation between spinel and rock salt. This novel high‐performance resistive random‐access memory (RRAM) device...
The application of high‐entropy oxide (HEO) has attracted significant attention in recent years owing to their unique structural characteristics, such as excellent electrochemical properties and long‐term cycling stability. However, the application of resistive random‐access memory (RRAM) has not been extensively studied, and the switching mechanism of HEO‐based RRAM has yet to be thoroughly investigated...
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