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In high-power density power converter designs, power losses of power devices are essential design parameters. Silicon-carbide (SiC) power devices are expected as next generation power devices due to their superior performances compared to conventional silicon (Si) power devices. The power loss performances of a SiC power module using SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) and Junction...
Normally-off power MOSFET with low Rons has been developed. IEMOSFET on 4H-SiC carbon-face wafer exhibits an extremely low Rons of 1.8 mOmegacm2 with a blocking voltage of 660 V. The effective channel mobility of this device is 90 cm2/Vs which corresponds to the channel resistance of 0.8 mOmegacm2. A step-down converter was fabricated with the normally-off IEMOSFET and SBD, and the operation of 400...
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