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Normally-off power MOSFET with low Rons has been developed. IEMOSFET on 4H-SiC carbon-face wafer exhibits an extremely low Rons of 1.8 mOmegacm2 with a blocking voltage of 660 V. The effective channel mobility of this device is 90 cm2/Vs which corresponds to the channel resistance of 0.8 mOmegacm2. A step-down converter was fabricated with the normally-off IEMOSFET and SBD, and the operation of 400...
The inversion channel IEMOSFET has been fabricated on the 4H-SiC carbon-face substrate. The channel resistance was successfully reduced to 1 mOmegacm2 due to the high inversion channel mobility on the carbon-face epitaxial layer. The extremely low specific on-resistance of 2.7 mOmegacm2 was achieved with the blocking voltage of 700V. This specific on-resistance is the lowest in the normally-off MOSFET...
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