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In this paper, we have investigated the electrical properties of TiAl3Oxfilm as electrical gate insulator deposited by pulsed laser deposition and presented a simple method to describe the thermal diffusion behaviors of metal atoms at TiAl3Ox/Si interfacial region in detail. The TiAl3Oxfilms show obvious electrical hysteresis by the capacitance-voltage measurements after post-annealing treatment...
The structural and optical characterizations of titania incorporated with alumina nanocrystals have been presented in this paper and the films exhibit excellent properties like low current density, small hysteresis as well as high photoluminescence quantum yields of about 361 nm. These properties are promising for the applications in future electronic devices.
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