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In this paper, reliability characteristics of nMOSFETs with La-incorporated HfSiON and HfON and metal gate have been studied. HfLaSiON shows greater device degradation by hot carrier (HC) stress than by positive bias temperature (PBT) stress, while HfLaON exhibits similar degradation during HC stress and PBT stress. To evaluate the contribution of bulk trap during PBT stress, a novel charge pumping...
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