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Sub‐300 nm optically pumped ultraviolet lasers were realized on low‐defect‐density (0001) AlN substrates fabricated from single crystalline AlN boules. The AlxGa1–xN/AlyGa1–yN hetero‐structures were grown by metal‐organic vapor phase epitaxy near atmospheric pressure. The high structural quality of the pseudomorphically deposited films was confirmed by X‐ray reciprocal space mappings and time‐resolved...
Low-loss high-power single pole single throw (SPST) monolithic RF switch based on AlGaN/GaN heterojunction field effect transistors (HFETs) demonstrate the insertion loss and isolation of 0.15dB and 45.9dB at 0.5GHz and 0.23dB and 34.3dB at 2GHz. Maximum switching powers are estimated +47dBm or higher. Factors determining the maximum switching powers are analyzed. Design principles to obtain equally...
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