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High reliability, high transmission speed and low power consumption laser diodes are required for optical interconnect. We have developed 1060 nm Vertical Cavity Surface Emitting Lasers (VCSELs) with InGaAs/GaAs strained quantum wells, oxide-confined and double intracavity structures for the requirement. In this paper, an extremely long term aging test close to the actual operating temperature was...
State of the art VCSEL technology will be reviewed in terms of power consumption and reliability in order to realize the energy efficient HPC and Data Centers. Longer wavelength VCSEL seems promising candidate for the upcoming higher performance computes with energy saving.
1060nm VCSELs with InGaAs/GaAs strained quantum wells have been reviewed in terms of power consumption and reliability. Clear eye opening was confirmed at 10Gbps with bias current of as low as 1.4mA.
High performance 32 nm-node interconnect with ELK (Extremely Low-k, k=3D2.4) has been demonstrated. To suppress process damage and enlarge the via-line space with a wide lithography process margin, robust ELK film with a metal hard mask (MHM) self-aligned via process has been developed. It has accomplished both ultimate low capacitance wirings and high TDDB reliability between Cu lines with vias....
VCSEL performance will be reviewed. A careful design of cavity structure, as well as precise control in the epitaxial growth enables us to achieve a record power conversion efficiency of 62% in the 1060nm VCSELs.
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