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Well‐aligned transition metal dichalcogenide (TMD) wires and their heterostructures are fabricated by J.‐H. Ahn and co‐workers, using a solution‐based, self‐assembly growth method, as described on page 4142. The structures, thicknesses, and the repetition period of the self‐assembled wires are controlled by regulating the internal flow of the precursor solution. As a practical application, WS2/MoS...
The creation of self‐aligned MoS2 and WS2 wire arrays and their stacked hetero structures with controlled sizes and properties by a novel and facile method is presented. The thicknesses and periodicities of the aligned wires can be precisely controlled by adjusting certain parameters. These transition metal dichalcogenide wires are used as 1D semiconducting materials in the construction of flexible...
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