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Temperature-dependent ON-state breakdown (BVON) loci of AlGaN/GaN high-electron-mobility transistors (HEMTs) were experimentally demonstrated for the first time. With gate-current extraction technique, impact ionization was revealed to be responsible for the ON-state breakdown in our device as the HEMTs is marginally turned on. The characteristic electric-field Ei of impact ionization was extracted...
The thermal stability and electrical characteristics of GaN high-electron-mobility transistors (HEMTs) were investigated. Storage tests were carried out at 400°C for 48 h to study the ohmic-contact stability by means of the transmission line model. It was found that Ti/Al/Ni/Au ohmic contacts were stable and had superior thermal performance, but the Schottky contact may be more sensitive to the temperature...
Unintentionally doped AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with compositionally step-graded AlGaN barrier layer were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The HEMT structure exhibited typical two-dimensional electron gas (2DEG) mobility of 1600cm2/Vs at room temperature and 6412cm2/Vs at 79K with almost equal 2DEG concentration...
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