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Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1° precision are reported, while...
Silicon micromachining technology is naturally suited for making THz components, where precision and accuracy are essential. We report here the development of a robust micromachining technology that has enabled us to make waveguide features in the 325 to 500 GHz range with nominal losses. Extension of this technology towards a wafer-level integrated submillimeter-wave receiver front-end is also discussed...
We report the random telegraph noise observed in gate-all-around (GAA) PMOS silicon nanowire FETs (SNWFETs) with the radius of 5 nm, at various temperatures (s) down to 4.2 K. From the -dependence of the capture/emission time, we obtain the energy and the charging status of the trap states. The gate bias dependence and the -dependence of the scattering coefficient-mobility product extracted from the...
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