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In order to precisely test the switching performance of high speed SiC MOSFET, this paper researches the test method. The simulation switching waveforms considering the parasitic inductors are compared to the switching waveforms without considering the parasitic inductors in this paper. The distinctions of comparative results are obvious and prove the effects of parasitic inductors on switching performance...
Silicon carbide (SiC) semiconductor devices have received extensive attention with the better performance of the wide band gap material. It is necessary to compare with their silicon (Si) counterparts due to SiC semiconductor devices are new. In this paper, a test platform based on buck converter is constructed to test the switching characteristics of SiC MOSFET, Si CoolMOS and IGBT, the input voltage...
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