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The authors have developed a new heterogeneous-integration method for fabricating semiconductor lasers with high modulation efficiency on Si substrates. The method employs the direct bonding of an InP-based active layer to the SiO2 layer of a thermally oxidised Si substrate (SiO2/Si substrate), followed by the epitaxial growth of InP to form a buried heterostructure (BH). By using the InP membrane,...
We have successfully demonstrated epitaxial growth of an InP layer to fabricate an InGaAsP/InP buried heterostructure (BH) on Si substrate, in which a thin InGaAsP-based active layer is directly bonded to SiO2/Si substrate before fabricating the BH. An O2 plasma-assisted wafer bonding is used to combine a 2-inch Si substrate with 1-μm thick thermal oxide and a 2-inch InP substrate with the active...
A dramatic increase of carrier concentration in Zn-doped InGaAs layer was achieved by adding a small amount of Sb as a surfactant during MOVPE growth. A carrier concentration as high as 6 × 1019 cm-3 was obtained and resulted in a specific contact resistance lower than 2 × 10-7 Ωcm2.
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