The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We explore the limits of sub-melt laser annealing on blanket SiGe/Si-cap layers with Ge concentrations up to 55% using High-Resolution X-ray Diffraction (HR-XRD) and a new non-contact metrology to measure the mobility of inversion charges. We discuss the influence of the laser peak temperature and SiGe/Si stack parameters. It is shown that for high Ge concentrations and SiGe/Si-cap thicknesses of...
We have studied n+ Si:C stressor formation by C or C7H7 ion implantation on blanket wafers for different integration schemes (so-called post Source/Drain versus post Source/Drain Extension integration). Using sheet resistance and High Resolution X-Ray Diffraction (HR-XRD) fitting parameters as the main metrics, we studied the influence of different implant/anneal parameters as well as the process...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.