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An ultrathin α-Ta (5nm)/graded Ta(N) (1.5nm)/TaN (2.5nm) multilayer film coated with Cu film was deposited on the Si substrate using reactive magnetron sputtering in N 2 /Ar ambient. The film stacks of Cu/α-Ta/graded Ta(N)/TaN/Si were then annealed in a vacuum chamber at 400–700°C for 1h. X-ray diffraction (XRD), scanning electron microscopy (SEM), cross-sectional transmission electron microscopy...
The diffusion properties of Cu, Cu/titanium nitride (TiN) and Cu/TiN/Ti metallization on GaAs, including as-deposited film and others annealed at 350-550 o C, were investigated and compared. Data obtained from X-ray diffractometry, resistivity measurements, scanning electron microscopy, energy dispersive spectrometer and Auger electron spectroscopy indicated that in the as-deposited Cu/GaAs...
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