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The basic multi-gate Vt variation model for uniform doping is extended to support a 2-region fin doping methodology that provides good agreement with Vt mismatch measurements as well as useful insights into how the non-uniform fin doping impacts the mismatch. The methodology displays good agreement for both NMOS and PMOS SRAM devices from a FinFET process. The NMOS Vt mismatch as a function of Vt...
The utilization of FinFET devices in the SRAM cell provides many benefits over planar bulk devices due to the fully-depleted behavior with improved subthreshold slope, short-channel effects, drive current, and mismatch. However, the quantized nature of the fins results in several new challenges as compared to planar devices. For the layout of the SRAM cell with FinFETs, the cell width needs to match...
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