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InGaAs high electron mobility transistors (HEMTs) on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition (MOCVD). Room temperature Hall mobilities of the 2-DEG are measured to be over 8 700 cm2/V-s with sheet carrier densities larger than 4.6×1012 cm−2. Transistors with 1.0 μm gate length exhibits transconductance up to 842 mS/mm. Excellent depletion-mode...
Fabrication and performance of high-frequency 0.3-μm gate-length depletion-mode metamorphic Al0.50In0.50As/Ga0.47In0.53As high electron mobility transistors (mHEMT) grown by Metalorganic Chemical Vapor Deposition (MOCVD) on n-type silicon substrates is reported. Using a combined optical and e-beam photolithography technology, submicron mHEMT devices on Si have been achieved. A maximum trans-conductance...
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