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Using conventional and polarization-dependent Raman spectroscopy we investigate the structural properties of Germanium films thermally evaporated on Silicon under various conditions. The analysis suggests that the Ge films can be crystalline, amorphous and poly-oriented, depending on the substrate temperature. We use both comparison with Raman spectra of Ge films grown on amorphous substrates and...
We report on novel pn Ge photodetectors fabricated on glass. The fabrication consists of wafer bonding and layer splitting, followed by a low-temperature epitaxial growth of Ge. The photodiodes are characterized in terms of dark current and responsivity, and their performance compared with devices realized on either Ge or Si. The minimum current density is 50μA/cm 2 at 1V reverse bias, the...
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