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SiO2 and HfO2> gate dielectrics with TiN electrodes were subjected to an aggressive post-fabrication plasma exposure. A comparison of plate and comb antenna structures before and after exposure demonstrated that the plate antennae structures demonstrate evidence of plasma-induced damage while the comb structures did not. The physical origin of PD in SiO2 devices was found to be the amphoteric interface...
Fluorine passivation in poly-Si/TaN/HfO2/p-Si and poly-Si/TaN/HfSiON/HfO2/p-Si gate stacks with varying TaN thickness through gate ion implantation has been studied. It has been found that when TaN thickness was less than 15 nm, mobility and subthreshold swing improved significantly in HfO2 nMOSFETs; while there was little performance improvement in HfSiON/HfO2 nMOSFETs due to the blocking of F atoms...
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