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This paper reports low temperature hermetic wafer bonding using Al/Sn/Al/Sn/Al as a bonding layer. The Al surface of the bonding layer was oxidized in air, but hermetic sealing was demonstrated without surface treatment at 370 °C to 390 °C, which was lower than the maximum temperature of complementary metal oxide semiconductor (CMOS) backend process (400 °C). For the successfully sealed samples, the...
The direct integration of surface acoustic wave (SAW) devices on top of large-scale integrated circuits (LSI) will enable multiband wireless front-ends, one-chip wireless systems, high-performance one-chip oscillators etc. However, this has been difficult, because SAW devices are often fabricated on piezoelectric crystals with special cut angle, which have different coefficients of thermal expansion...
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