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Aluminum with Sn intermediate layer shows very large deformation even below 400°C. Using this new layer structure as sealing metal, high yield hermetic package of MEMS was demonstrated at only 370°C without any treatment of surface oxide removal. During bonding, the bonding metal is significantly pressed (the reduction rate of thickness ∼90%), which guarantees hermeticity at high yield. Based on SEM,...
The 0-th shear horizontal (SH0) mode plate wave has an electromechanical coupling factor k2 larger than 50% in a (0°, 120°, 0°) LiNbO3 (LN) plate thinner than 0.1λ, where λ is a pitch of an intergidital transducer (IDT). In the previous study, ultra-wide-band ladder filters composed of cavity type resonators recorded 6 dB bandwidth from 41% to 51% in a digital TV band. However, the structure is fragile,...
Ultra-wide band ladder filters with bandwidth of 41 to 51%, which fully cover the digital TV band, were fabricated using 0-th shear horizontal (SH0) mode plate wave in a (0°, 117.5–120°, 0°) LiNbO3 (LN) ultra-thin plate. A LN/cavity/Si wafer with a number of devices must be separated into chips as they can be mounted on a printed circuit board (PCB). When the wafer is separated using a dicing machine,...
Wafer-level vacuum sealing and electrical interconnection are often crucial for advanced device packaging. This article presents a novel packaging and integration technology, which is applicable to non-planar (i.e. microstructured) and/or temperature-sensitive wafers, by means of Au-Au low-temperature thermo-compression bonding utilizing electroplated Au microbump that surface has been planarized...
This paper presents an attractive poly-SiGe thin-film packaging and MEM (microelectromechanical) platform technology for the generic integration of various packaged MEM devices above standard CMOS. Hermetic packages with sizes up to 1 and different sealed-in pressures ( 100 kPa and 2 kPa) are demonstrated. The use of a porous cover on top of the release holes avoids deposition...
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