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In article number 1804470, Du Xiang, Wei Chen, and co‐workers report photoinduced nonvolatile and programmable doping in MoTe2 based on a heterostructure of MoTe2 and h‐BN. By spatially controlling the photodoping region, high‐performance photoresist‐free p–n junctions and inverters in the MoTe2 homostructure are achieved, illustrating the great potential of applying this photodoping technique in...
2D transition‐metal dichalcogenide (TMD)‐based electronic devices have been extensively explored toward the post‐Moore era. Huge efforts have been devoted to modulating the doping profile of TMDs to achieve 2D p–n junctions and inverters, the fundamental units in logic circuits. Here, photoinduced nonvolatile and programmable electron doping in MoTe2 based on a heterostructure of MoTe2 and hexagonal...
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