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Er doped nano-Si system has been optimised in terms of photoluminescence intensity and lifetime. Reduction of carrier absorption losses and increasing of the number of Er ions coupled to Si-nc (around 25%) have been achieved.
A detailed study of the free carrier absorption losses at 1.5 mum has been performed on silicon-nanocrystal rib waveguides by pumping at 532 nm. At the highest photon flux, the measured losses were about 6 dB/cm. We demonstrate that the dynamics of the carrier absorption is that of the luminescence.
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