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In this paper, a Ku-band low phase noise wide tuning range voltage controlled oscillator (VCO) using a 2-mum GaAs heterojunction bipolar transistor (HBT) technology is presented. A common-emitter (CE) topology with an inductor-capacitor (LC) feedback network is utilized in the circuit design, and the VCO demonstrates a low phase noise of -112.5 dBc/Hz at 1-MHz offset carrier frequency. The tuning...
This paper presents the design considerations for a stacked transistor topology for power amplifier design. A HBT is used to show at 1 GHz the effect of bias, device size, and matching, including interstage matching, which has had no beneficial effect so far. Most important is the base capacitor termination of the top transistors.
A Q-band low phase noise voltage controlled oscillator (VCO) using balanced π-feedback with 2-μm GaAs heterojunction bipolar transistor (HBT) process is reported in this paper. The VCO features a phase noise of -105.5 dBc/Hz at 1-MHz offset, and a tuning frequency of from 41.2 to 42.1 GHz with a maximum output power of -9 dBm. The differential outputs are also provided from the VCO due to the use...
This work investigates the temperature dependence, from 300K to 77K, of the output power, PAE, and linearity for SiGe HBTs with and without SIC. The NADC pi/4DQPSK signal is used to analyze the linearity of SiGe HBTs. For device without SIC, the heterojunction barrier effect becomes more propound, which seriously reduces the current gain and cutoff frequency at cryogenic temperatures. The output power,...
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