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In this work, as a new flexible gate insulator of organic thin film transistor (OTFT) device, PMDA-ODA-type polyimide (PI) were inserted between ITO and pentacene layer using modified ionized cluster beam (MICB) deposition method. The grain size of pentacene layers deposited by MICB method on ordered PI substrates was bigger than those by using conventional deposition method. The grain growth effect...
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