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We report experiments in which we attempted to grow Ge and Si 0.2 Ge 0.8 films with a tetragonal crystal structure on InP(001). The substrate was chosen because it has approximately the same lattice constant as the tetragonal Si x Ge 1-x a-axis lattice constant. The tetragonal structure has been observed previously in Ge, and has a 1.5-eV...
We have studied the influence of surfactant on solid phase epitaxy of an amorphous Ge layer on Si(111) using in situ scanning electron microscopy. A monolayer of As overlayer deposited on the amorphous Ge layer raises the Ge crystallization temperature by up to 100 K both on 7 × 7 and “1 × 1” regions, as well as suppresses islanding of Ge. The crystallization temperature raise is discussed as pining...
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