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Ion implant damage to the Si lattice was investigated using ultraviolet (UV) Raman spectroscopy under two UV excitation wavelengths (266.0 and 363.8nm) with probing depths of ∼2 and ∼5nm into the surface. Ultra-shallow implantation of B+ and BF2+ ions with and without Ge pre-amorphization implantation (PAI) into 300mm diameter n-type Si(100) wafers were prepared. Raman peak broadening and shape change,...
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