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Non‐polarized and polarized Raman spectra were measured in a‐plane GaN films grown on r‐plane sapphire. Active phonon models were verified under different geometry configurations. Our results showes that all a‐plane GaN films are under compressive strains both along and perpendicular the c‐axis. With increasing film thickness, compressive strains are gradually relaxed. Strain relaxation process...
We have estimated the longitudinal effective mass (m‖) of electron in n‐type InN films by Raman scattering. The samples were grown by MOVPE (metal organic vapor phase epitaxy) with free carrier concentration of n =6.7×1018‐9.9×1018 cm‐3 according to Hall measurement. A weak Raman signal observed at ∼430 cm‐1 at room temperature was sharpened and shifted to higher frequency toward the A1(TO)‐phonon...
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