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Hard Carbon have become the most promising anode candidates for sodium‐ion batteries, but the poor rate performance and cycle life remain key issues. In this work, N‐doped hard carbon with abundant defects and expanded interlayer spacing is constructed by using carboxymethyl cellulose sodium as precursor with the assistance of graphitic carbon nitride. The formation of N‐doped nanosheet structure...
In this work, monolithic three‐dimensional complementary metal oxide semiconductor (CMOS) inverter array has been fabricated, based on large‐scale n‐MoS2 and p‐MoTe2 grown by the chemical vapor deposition method. In the CMOS device, the n‐ and p‐channel field‐effect transistors (FETs) stack vertically and share the same gate electrode. High k HfO2 is used as the gate dielectric. An Al2O3 seed layer...
Albeit considerable attention to the fast‐developing organic thermoelectric (OTE) materials due to their flexibility and non‐toxic features, it is still challenging to design an OTE polymer with superior thermoelectric properties. In this work, two “isomorphic” donor–acceptor (D–A) conjugated polymers are studied as the semiconductor in OTE devices, revealing for the first time the internal mechanism...
Spiral cores are crucial for designing efficient hole transporting materials (HTMs) for perovskite solar cells (PSCs), owing to their no‐planar 3D architecture, high thermal stability, good solubility, and beneficial solid‐state morphology. A lack of facile synthetic procedures for the spiral core limited the development of novel and stable spiral HTMs. In this regard, a one‐step reaction is adopted...
Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single‐crystalline GaN film on WS2‐glass wafer is successfully performed by using the strong polarity of WS2 buffer layer and its perfectly matching lattice...
Semiconductors
In article number 2202529, Tongbo Wei, Zhongfan Liu, Peng Gao, Zhiqiang Liu, and co‐workers find that geometry matched WS2 can provide a proper lattice potential field for nitrides epitaxial growth. By using a transferred WS2 buffer layer, a single‐crystalline GaN epilayer can be obtained on an amorphous quartz glass by heterogenous epitaxy.
Potassium‐ion batteries (PIBs) have great potential in energy storage due to their high abundance and low cost of potassium resources. Tellurium (Te) is a promising PIB cathode due to its high volumetric capacity and good electronic conductivity. However, the electrochemical (de)potassiation mechanism of Te remains elusive due to the lack of an effective method of directly observing the dynamic reaction...
Na3V2(PO4)2F3 has attracted wide attention due to its high voltage platform, and stable crystal structure. However, its application is limited by the low electronic conductivity and the ease formation of impurity. In this paper, the spherical Br‐doped Na3V2(PO4)2F3/C is successfully obtained by a one‐step spray drying technology. The hard template polytetrafluoroethylene (PTFE) supplements the loss...
Polar domain walls in centrosymmetric ferroelastics induce inhomogeneity that is the origin of advantageous multifunctionality. In particular, polar domain walls promote charge‐carrier separation and hence are promising for energy conversion applications that overcome the hurdles of the rate‐limiting step in the traditional photoelectrochemical water splitting processes. Yet, while macroscopic studies...
Spontaneous Lattice Inversion
In article number 2200057, Zhiqiang Liu, Shenyuan Yang, Yong Zhang, Peng Gao, and co‐workers confirm the polarity of AlN on sapphire prepared by metal–organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted, instead, experiences a spontaneous polarity inversion. Furthermore, a vertical 2D electron gas is revealed at the...
The performance of nitride devices is strongly affected by their polarity. Understanding the polarity determination and evolution mechanism of polar wurtzite nitrides on nonpolar substrates is therefore critically important. This work confirms that the polarity of AlN on sapphire prepared by metal–organic chemical vapor deposition is not inherited from the nitrides/sapphire interface as widely accepted,...
2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic and optoelectronic applications. However, the achievements are still quite far away from practical applications. Much more effort should be made to further improve their performance. Here, p‐type MoSe2 is successfully achieved via substitutional doping of Ta atoms, which is confirmed...
Hard carbons (HCs) are emerging as promising anodes for potassium‐ion batteries (PIBs) due to overwhelming advantages including cost effectiveness and outstanding physicochemical properties. However, the fundamental K+ storage mechanism in HCs and the key structural parameters that determining K+ storage behaviors remain unclear and require further exploration. Herein, HC materials with controllable...
The nitride films with high indium (In) composition play a crucial role in the fabrication of In‐rich InGaN‐based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain‐modulated growth method, namely the graphene (Gr)‐nanorod (NR) enhanced quasi‐van der Waals...
Embedding the functional nanostructures into a lightweight nanocarbon framework is very promising for developing high performance advanced electrodes for rechargeable batteries. Here, to realize workable capacity, core–shell (FeSe2/C) nanostructures are embedded into carbon nanotube (CNT) framework via a facile wet‐chemistry approach accompanied by thermally induced selenization. The CNT framework...
Potassium ion hybrid capacitors (PIHCs) are of particular interest benefiting from high energy/power densities. However, challenges lie in the kinetic mismatch between battery‐type anode and capacitive‐type cathode, as well as the difficulty in achieving optimized charge/mass balance. These significantly sacrifice the electrochemical performance of PIHCs. Here, strategies including charge/mass balance...
In article number 2004276, Rong Yang, Guangyu Zhang, and co‐workers develop an in situ oxygen substitutional doping in MoS2 monolayers by one step chemical vapor deposition process and lateral heterostructures with controlled doping concentrations are reliably fabricated. The bandgap tunability (from 2.25 to 1.75 eV) and n‐doping electronic properties are realized. This nondestructive oxygen doping...
In 2D semiconductors, doping offers an effective approach to modulate their optical and electronic properties. Here, an in situ doping of oxygen atoms in monolayer molybdenum disulfide (MoS2) is reported during the chemical vapor deposition process. Oxygen concentrations up to 20–25% can be reliable achieved in these doped monolayers, MoS2‐xOx. These oxygen dopants are in a form of substitution of...
Sodium‐ion batteries (SIBs) are considered a prospective candidate for large‐scale energy storage due to the merits of abundant sodium resources and low cost. However, a lack of suitable advanced anode materials has hindered further applications. Herein, metal–semiconductor mixed phase twinned hierarchical (MPTH) MoS2 nanowires with an expanded interlayer (9.63 Å) are engineered and prepared using...
van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intralayer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high‐density storage...
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