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We present intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the 5-12 THz range depending on the well width. These results may be relevant for the design of SiGe-based THz Quantum Cascade emitters.
Research on band-gap engineering of Silicon-Germanium heterostructures for the realization of Quantum Cascade (QC) structures emitting in the Terahertz (THz) spectral region has recently attracted a vast interest. While several successful attempts have been reported using hole-based (p-type) intersubband transitions, very few results have been published on systems exploiting electrons (n-type). In...
High-quality Ge/Si0.15Ge0.85 multiple quantum wells have been grown by low-energy plasma-enhanced chemical vapor deposition. Structural and optical properties have been measured by X-ray diffraction, optical transmission, photoluminescence and photocurrent experiments.
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