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We report the first demonstration of sub-60 nm deeply-scaled InGaAs- and InAs-on-insulator MOSFETs on Si substrates with MOS interface buffer engineering and Ni-InGaAs metal source/drain (S/D). The devices provide 400 % Ion enhancement, when comparing to that of an In0.53Ga0.47As control device with the same drain-induced-barrier-lowering (DIBL) of 100 mV/V, which is attributable to the mobility enhancement...
We have found that a Ni-InGaAs alloy is promising material for the self-aligned metal source/drain (S/D) of InGaAs MOSFETs. The Ni-InGaAs alloy has a low sheet resistance of around 25 Ω/square and a low Schottky barrier height (SBH) for n-InGaAs. We also introduce the SBH engineering by modulating the In content in InxGa1-xAs. The value of SBH is reduced with increasing the In content with maintaining...
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