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We reveal that the MOVPE-based gas-phase doping can yield lower arsenic diffusion constant and lower leakage current n+/p junctions in Ge compared with conventional ion-implantation doping. Thus, the gas-phase doping is quite effective for realizing high-performance Ge n-channel MOSFETs. By using gas-phase doping for source/drain junction formation, the (100) GeO2/Ge nMOSFETs have achieved high electron...
We have revealed that the MOVPE-based gas phase doping (GPD) can yield lower arsenic diffusion constant and lower leakage current n+/p junctions in Ge compared to conventional ion implantation doping. Thus, the GPD is quite effective for realizing high performance Ge n-channel MOSFETs. By using the GPD for source/drain (S/D) junction formation, the GeO2/Ge nMOSFETs have achieved high electron mobility...
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