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A 6-layer continuous and uniform MoS2 film is successfully grown by thermal chemical vapor deposition (CVD) through optimizing its growth conditions, and is used as channel material to fabricate top-gated transistors by conventional lithography process. Also, the effects of a buffer layer on the electrical performance of the CVD MoS2 transistor are investigated, and enhanced carrier mobility (0.69...
Pentacene organic thin-film transistor (OTFT) using Pd as gate electrode is proposed, with high-k LaZrO as gate dielectric. The Pd film is prepared by e-beam evaporation and then the LaZrO film is deposited by reactive sputtering in Ar/O2 ambience followed by an annealing in N2 at 400 °C. The OTFT achieves an obvious increase in carrier mobility (to 1.02 cm2/V·s), as compared with its counterpart...
Hafnium oxide (HfO2) is successfully used as gate insulator for fabricating metal-insulator-SiC (MISiC) Schottky-diode hydrogen sensor. Sensors undergone N2 annealing at different temperatures are fabricated for investigation. The hydrogen-sensing properties of these samples are compared with each other by taking the measurements at high temperature under various hydrogen concentrations using a computer-controlled...
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