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The GaN-based light-emitting diodes (LEDs) with hemisphere patterned sapphire substrate (PSS) have been investigated numerically using a combined method of ray tracing and finite-difference time-domain techniques based on Poynting vector. Our method has been verified using unpatterned sapphire substrate for which analytical formulas exist. The simulated results show that the hemisphere PSS can improve...
Effect of last barrier (LB) with different thicknesses and p-doping concentrations on efficiency improvement of blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) is simulated by APSYS software. The simulation results show that thin LB has positive effect at low p-doping concentration while negative at high concentration and that p-doping is more effective for LEDs with thick...
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